A piece of silicon sample has a resistivity of 0.1 ω. Cm. Its thickness is 100µm. The electron mobility is 1350cm 2 v - 1sec-1. When a magnetic field of bz and an ix of 1ma is supplied, the hall voltage is found out to be - 70µv. Calculate the electron concentration (#/cm3 or #/m3) of the silicon sample and bz (in wb/m2). Suppose the concentration of holes can be neglected.

Question

Cecelia Combs

Physics

19 September, 04:53

A piece of silicon sample has a resistivity of 0.1 ω. Cm. Its thickness is 100µm. The electron mobility is 1350cm 2 v - 1sec-1. When a magnetic field of bz and an ix of 1ma is supplied, the hall voltage is found out to be - 70µv. Calculate the electron concentration (#/cm3 or #/m3) of the silicon sample and bz (in wb/m2). Suppose the concentration of holes can be neglected.

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Answers (1)

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Matilda Vaughn · Answer 1

The answer is Rh = 135 cm^3 and B = 0.05185 wh/m^2

Explanation:

Resitivity of silicon = 0.1

thickness = 100um

so, I = ma

Required to find out concentration of electron, we know that

Rh = up

By putting in the values,

Rh = 1350 x 0.1

Rh = 135 cm^3

Now consider,

Rh = 1 / Rh. q

= 1 / Rh. q

= 1 / 135 x1.609 x10^-19

= 4.6037 x 10^16 / cm^3

Vh = BIRh / w

B = Vh w / IRh

B = - 70 x10^-6 x 100 x10^-6 / 1x 10^-3 x 135 x 10^-6

B = 0.05185 wh / m^2